{"id":80008,"date":"2013-09-20T21:44:22","date_gmt":"2013-09-20T13:44:22","guid":{"rendered":"https:\/\/wp-productionenv-bjg9h2g2bgg5b8aa.southeastasia-01.azurewebsites.net\/news\/macom-announces-new-600-w-gan-on-sic-pulsed-power-transistor\/"},"modified":"2013-09-20T21:44:22","modified_gmt":"2013-09-20T13:44:22","slug":"macom-announces-new-600-w-gan-on-sic-pulsed-power-transistor","status":"publish","type":"post","link":"https:\/\/starpath.global\/news\/macom-announces-new-600-w-gan-on-sic-pulsed-power-transistor\/","title":{"rendered":"Macom Announces New 600 W GaN on SiC Pulsed Power Transistor"},"content":{"rendered":"<\/p>\n<p>[Via Satellite 09-20-13] <b>Macom<\/b> <b>Technology Solutions<\/b>,<b> <\/b>a supplier of high-performance Radio Frequency (RF), microwave and millimeter wave products, has released a new ceramic Gallium nitride (GaN) on Silicon carbide (SiC) High-Electron Mobility Transistor (HEMT).<\/p>\n<p>The MAGX-001090-600L00 is a gold-metalized, matched GaN on SiC, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. The MAGX-001090-600L00 provides 600 W of output power with a typical 21.4 dB of gain and 63 percent efficiency. The device has very low thermal resistance of 0.05 degrees C\/W and load mismatch tolerance of 5-to-1. In addition, the device has the lowest pulse drop of 0.2 dB and also can be used effectively under more demanding Mode-S ELM operating conditions.<\/p>\n<p>Macom\u2019s GaN transistor technology has been qualified with accelerated, high-temperature lifetime tests and this device has a predicted Mean Time to Failure (MTTF) of more than 600 years at a maximum junction temperature of 200 degrees Celsius. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>[Via Satellite 09-20-13] Macom Technology Solutions, a supplier of high-performance Radio Frequency (RF), microwave and millimeter wave products, has released a new ceramic Gallium nitride (GaN) on Silicon carbide (SiC) High-Electron Mobility Transistor (HEMT). The MAGX-001090-600L00 is a gold-metalized, matched GaN on SiC, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":80009,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"inline_featured_image":false,"footnotes":"","_links_to":"","_links_to_target":""},"categories":[2],"tags":[],"class_list":["post-80008","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news"],"acf":[],"_links":{"self":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/posts\/80008"}],"collection":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/comments?post=80008"}],"version-history":[{"count":0,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/posts\/80008\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/media\/80009"}],"wp:attachment":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/media?parent=80008"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/categories?post=80008"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/tags?post=80008"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}