{"id":81090,"date":"2013-05-03T18:27:03","date_gmt":"2013-05-03T10:27:03","guid":{"rendered":"https:\/\/wp-productionenv-bjg9h2g2bgg5b8aa.southeastasia-01.azurewebsites.net\/news\/m-a-com-announces-new-500-w-gan-on-sic-hemt-pulsed-power-transistor\/"},"modified":"2013-05-03T18:27:03","modified_gmt":"2013-05-03T10:27:03","slug":"m-a-com-announces-new-500-w-gan-on-sic-hemt-pulsed-power-transistor","status":"publish","type":"post","link":"https:\/\/starpath.global\/news\/m-a-com-announces-new-500-w-gan-on-sic-hemt-pulsed-power-transistor\/","title":{"rendered":"M\/A-COM Announces New 500 W GaN on SiC HEMT Pulsed Power Transistor"},"content":{"rendered":"<p>[Satellite TODAY 05-03-13] <b>M\/A-COM Technology Solutions<\/b> has introduced a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications.<br \/>\n&nbsp;<br \/>\n&nbsp;&nbsp;&nbsp; The new transistor provides 500W of output power with 19 dB of gain and 55 percent efficiency, and it also features high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions.<br \/>\n&nbsp;<br \/>\n&nbsp;&nbsp;&nbsp; Operating between the 1200 MHz \u2013 1400 MHz Frequency range, the MAGX-001214-500L00 boasts a mean time to failure (MTTF) of 5.3*106hours, and is available as both flanged and flangeless packaged devices.<br \/>\n&nbsp;<\/p>\n<p>&nbsp; &nbsp; &nbsp;\u201cThe device is an ideal candidate for customers looking to upgrade L-Band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M\/A-COM\u2019s GaN Power Solutions,\u201d Paul Beasly, product manager, M\/A-COM said in a statement.&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>[Satellite TODAY 05-03-13] M\/A-COM Technology Solutions has introduced a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications. &nbsp; &nbsp;&nbsp;&nbsp; The new transistor provides 500W of output power with 19 dB of gain [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"inline_featured_image":false,"footnotes":"","_links_to":"","_links_to_target":""},"categories":[2],"tags":[],"class_list":["post-81090","post","type-post","status-publish","format-standard","hentry","category-news"],"acf":[],"_links":{"self":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/posts\/81090"}],"collection":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/comments?post=81090"}],"version-history":[{"count":0,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/posts\/81090\/revisions"}],"wp:attachment":[{"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/media?parent=81090"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/categories?post=81090"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/starpath.global\/blog\/wp-json\/wp\/v2\/tags?post=81090"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}