Tag: MOSFETs

  • EPC Space Launches 300 V Rad-Hard GaN FET for Space Power Systems

    —

    by

    starpathwp-production
    in

    EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, has announced the launch of the EPC7030MSH, a radiation-hardened (RH) 300 V gallium nitride (GaN) FET that delivers unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems. As satellite platforms require higher voltage buses to support growing…

  • Microchip Expands Radiation-Hardened MOSFET Line with JANSF 300 Krad Certification

    —

    by

    starpathwp-production
    in

    Microchip Technology announces its completion of its family of radiation-hardened (rad-hard) power MOSFETs to the MIL-PRF-19500/746 slash-sheet specification and the achievement of JANSF qualification for its JANSF2N7587U3, 100V N-channel MOSFET to 300 Krad (Si) Total Ionizing Dose (TID). The JANS qualification represents the highest level of screening and acceptance requirements, ensuring the superior performance, quality…

  • Infineon Expands Rad-Tolerant Power MOSFET for Space Applications

    —

    by

    starpathwp-production
    in

    Infineon Technologies, a global semiconductor leader in power systems and IoT, announced the addition of P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for Low-Earth-Orbit (LEO) space applications. The new devices are part of Infineon’s expanding portfolio designed for next-generation “NewSpace” applications, providing cost-optimized radiation-tolerant MOSFETs that enable engineers to achieve faster time-to-market…