Analog Devices has introduced the ADH943AS, a space-grade gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifier designed for operation from 24 GHz to 34 GHz. The device is intended for high-frequency microwave and space applications that require high output power, gain, and linearity.
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The four-stage amplifier delivers 23 dB of gain, 34 dBm saturated output power (PSAT), and 39 dBm output third-order intercept point (OIP3), while operating from a 5.5 V supply with a typical quiescent current of 1300 mA. It also provides 23% power-added efficiency (PAE), making it suitable for systems where both power output and efficiency are important requirements. The ADH943AS features internally matched 50 Ω RF input and output ports, eliminating the need for external matching components and simplifying system integration. A power detector output is also included to support monitoring and control functions within RF system designs.
The device is screened in accordance with guidelines based on MIL-PRF-38535 Class Level S requirements and is available in an 18-lead ceramic leadless hermetic surface-mount package with a gold-finished lead structure. The space-grade version, identified as ADH943A-701LSH7, supports operation across a frequency range of 24 GHz to 34 GHz and an ambient temperature range of -40°C to +85°C. The amplifier is designed for microwave radio and other high-frequency communication systems that require high linearity and output power in a compact MMIC form factor.
